Electronic Structure and Photoemission Studies of Late Transition-metal O X I D E S - Mott Insulators and High-temperature Superconductors

نویسندگان

  • Z.-X. SHEN
  • D. S. DESSAU
  • Z.-X. Shen
  • D. S. Dessau
چکیده

Stimulated by the discovery of high-temperature superconductivity, the electronic structure of late 3d transition-metal oxides is presently one of the most extensively studied subjects in condensed matter physics. In this review, we hope to summarize the progress we have made and the problems we are facing. The emphasis of the review is on the latest angle-resolved photoemission studies that have provided much insight towards the understanding of these materials. This includes the recent experiments from transition-metal mono-oxides, normal state electronic structure and Fermi surface mapping of Bi,Sr2CaCu,0B +d, BizSrzCuOd +6, YBazCu307-,, YBa,&Os, Nd2_,Ce,Cu0,, and the superconducting gap of Bi2Sr2CaCuZ0s+d. For the transition-metal mono-oxides, we discuss the experimental manifestation of the four aspects of the electronic structure that make these Mott-Hubbard insulators so interesting. This includes the large Coulomb interaction U (on the cation sites), the charge transfer as a result of strong hybridization, the energy dispersion in the crystal lattice, and the multiplet and magnetic splittings. For the high-temperature superconductors, we concentrate on the low energy excitations, the topology of the Fermi surface in the normal state, and the superconducting gap. Angle-resolved photoemission data show that the oxide superconductors have well defined Fermi surfaces. The volume of the Fermi surface in the high doping regime appears to be consistent with the results of band calculations. A striking feature of the low energy excitations is the presence of some very flat bands (due to a saddle point singularity in the band structure) which lie near the Fermi energy in p-type compounds near their optimal doping levels for superconductivity. The corresponding flat bands are well below the Fermi energy in n-type cuprates. The energy position of these flat bands is expected to have wide ranging effects on the physical properties of these materials, including the temperature dependence of the resistivity and the superconducting transition temperature. High-resolution photoemission has also been successfully applied to the study of the superconducting gap in Bi,Sr,CaCu,08 +&. While the presently attainable energy resolution is poorer than that of many other spectroscopies, photoemission has the advantage that it is k-resolved as well as being very direct. This unique capability has enabled recent photoemission experiments to reveal the highly anisotropic nature of the superconducting gap in the a-b plane. This suggests the possibility of a detailed experimental determination of the superconducting order parameter. 4 Z.-X Shen, D.S. Dessau jPhysics Reports 253 (1995) I-162

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

From Mott insulator to overdoped superconductor: Evolution of the electronic structure of cuprates studied by ARPES

We review our angle-resolved photoemission spectroscopy (ARPES) results on different layered oxide superconductors, and on their insulating parent compounds. The low energy excitations are discussed with emphasis on some of the most recent issues, such as the Fermi surface and remnant Fermi surface, the pseudogap and d-wave-like dispersion, and lastly the signatures in the ARPES spectra of mult...

متن کامل

Disappearance of nodal gap across the insulator-superconductor transition in a copper-oxide superconductor.

The parent compound of the copper-oxide high-temperature superconductors is a Mott insulator. Superconductivity is realized by doping an appropriate amount of charge carriers. How a Mott insulator transforms into a superconductor is crucial in understanding the unusual physical properties of high-temperature superconductors and the superconductivity mechanism. Here we report high-resolution ang...

متن کامل

Possible Electronic Structure of Domain Walls in Mott Insulators

We discuss the quantum numbers of domain walls of minimal length induced by doping Mott insulators, carefully distinguishing between holon and hole walls. We define a minimal wall hypothesis that uniquely correlates the observed spatial structure with the doping level for the low-temperature commensurate insulating state of La2−xBaxCuO4 and related materials at x = 8 . We remark that interestin...

متن کامل

عدم تقارن الکترون-حفره در کوپراتهای دمای بالا از دید نظری

  Asymmetric features of various physical quantities in the normal and superconducting states between hole- and electron-doped cuprate high-temperature superconductors have been an issue of debate for a long time. Their exploration is very important for the understanding not only of the mechanism of high-Tc superconductivity but also of the nature of doped-Mott insulators. Presented in this rev...

متن کامل

Electronic structure of CuO2 planes: From insulator to superconductor

Using angle-resolved photoemission and linearly polarized synchrotron radiation, we measured the electronic band structure of electronic states of CuO2 plane materials ranging from insulators ~Sr2CuO2Cl2) to overdoped superconductors ~Bi2Sr2CaCu2O81x). We report three results: ~i! The CuO2 containing insulator possesses a spin-density-wave ~SDW! ground state; ~ii! there are precursors of the SD...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1994